Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.
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Unclamped Inductive load test circuit Figure Zero Gate Voltage Drain Current. V DS Temperature Coefficient.
Repetitive rating; pulse width limited by maximum junction temperature see fig. Test circuit for inductive load switching and diode recovery times Figure The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.
View PDF for Mobile. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Pulsed Drain Current a. These packages have a Lead-free second level interconnect.
Thermal impedance for TO Figure 4. Unclamped inductive waveform Figure Gate charge vs gate-source voltage Figure IRF datasheet and specification datasheet Download datasheet.
The TOAB package is universally preferred for all. I SM p – n junction diode. Pulsed Diode Forward Current a. Electrical characteristics Figure The low thermal resistance.
Copy your embed code and put on your site: Switching times test circuit for resistive load Figure Daatsheet Next General features.
Repetitive Avalanche Current a. Elcodis is a trademark of Elcodis Company Ltd.
Soldering Recommendations Peak Temperature. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Body Diode Reverse Recovery Charge. Gate charge test circuit Figure IRF datasheet and specification datasheet.
N-channel V – 0. Single Pulse Avalanche Energy b. Drain-Source Body Diode Characteristics. The maximum ratings related to soldering conditions are also marked on the inner box label.
Operating Junction and Storage Temperature Range. Safe operating area for TO Figure 3. Pulse width limited by safe operating area 2.
This datasheet is subject to change without notice. All other trademarks are the property of their respective owners. L S die contact.
Repetitive Avalanche Energy a. Continuous Source-Drain Diode Current. Body Diode Reverse Recovery Time. Capacitance variations Figure Static drain-source on resistance Figure Vishay Intertechnology Electronic Components Datasheet. Contents Contents 1 Electrical ratings. Case-to-Sink, Flat, Greased Surface. Download datasheet Kb Share this page.