isc website： 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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No liability will be accepted by the publisher for any consequence of its use. Datasheer 3 Rev 2. Typical DC current gain. Forward bias safe operating area.
Typical base-emitter saturation voltage.
How long will receive a response. Oscilloscope display for VCEOsust. Stress above one or more of the limiting values may cause permanent damage to the device.
September 8 Rev 2.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. UNIT dagasheet – 1. New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Want to post a buying lead? Dattasheet times waveforms 16 kHz. Application information Where application information is given, it is advisory and does not form part of the specification. September 6 Rev 2.
Mounted with heatsink compound. SOT; The xatasheet plane is electrically isolated from all terminals. Click here to Download. Product specification This data sheet contains final product specifications. Cfb -VBB t Fig.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Exposure to bu25200ax values for extended periods may affect device reliability.
Typical collector-emitter saturation voltage.
Test circuit for VCEOsust. Switching times waveforms 32 kHz. Reproduction in whole or in part is prohibited without the prior written consent datasheet the copyright owner. Switching times test circuit. September 1 Rev 2. September 2 Rev 2. Philips customers using or selling these products for use in dqtasheet applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Typical collector storage and fall time.
September 7 Rev 2. Collector to emitter voltage Collector to emitter voltage open base Collector current DC Collector current peak value Base current DC Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for datasheef in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
Refer to mounting instructions for F-pack envelopes.